, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 bu2520df description ? high switching speed ? high voltage ? built-in ddamper ddiode applications ? for use in horizontal deflection circuits of large screen color tv receivers absolute maximum ratings (ta=25'c) thermal characteristics symbol vcbo vceo vebo ic icm ib ibm pc t, tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous base current-peak collector power dissipation @tc=25"c junction temperature storage temperature range value 1500 800 7.5 10 25 6 9 45 150 -55-150 unit v v v a a a a w ?c c symbol rth j-c parameter thermal resistance, junction to case max 2.8 unit k/w pin 1.base 2. collect or 3. emitter ~c-cpfe package jim a & r d f h j k l n 0 r s t j mm win 20.75 14.7q 4. so 0.90 3.20 3,70 oiso 1?,-:.:1 1.90 10. 80 5.60 1,30 3,10 3,70 0,55 vax 21,30 1 :" ; : : :: no 3,40 4.30 0.70 17,00 2,10 11,00 : 30 2,20 3,50 9.3-0 0.75 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of eoine to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor bu2520df electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) v(br)ebo vce(sat) vee(sat) ices iebo hpe-1 hfe-2 vecf cob parameter collector-emitter sustaining voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain c-e diode forward voltage output capacitance conditions lc= 100ma; ib= 0, l= 25mh ie= 600ma; lc= 0 lc=6a; ib=1.2a ic=6a;ib=1.2a voe= bvces; vbe= 0 vce= bvces; vbe= 0;tc=125'c veb= 7.5v; lc= 0 lc= 1a; vce= 5v lc= 6a; vce= 5v if=6a ie=0;vcb= 10v;f,est= 1mhz min 800 7.5 100 5 typ. 13.5 13 7 115 max 5.0 1.1 1.0 2.0 300 9.5 2.2 unit v v v v ma ma v pf switching times (16khz line deflection circuit) tstg tf storage time fall time lc= 6a, lb(end)= 1 .oa; lb= 5.3 u h; lc- dou u h, l_.ft>- lynr -vbb=4v; (-dlb/dt=0.8a/ns) 5.5 0.5 u s u s
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